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TIP130/131/132 TIP135/136/137
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
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TIP131, TIP132, TIP135 AND TIP137 ARE SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION The TIP130, TIP131 and TIP132 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP137. TO-220
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INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 5 K
R2 Typ. = 150
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T s tg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current T otal Dissipation at Tc ase 25 oC Tamb 25 o C Storage T emperature Max. Operating Junction T emperature T IP130 T IP135 60 60 Valu e TIP131 TIP136 80 80 5 8 12 0.3 70 2 -65 to 150 150 T IP132 T IP137 100 100 V V V A A A W W
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Unit
C C
* For PNP types voltage and current values are negative.
October 1995
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TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
THERMAL DATA
R thj -ca se R thj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.78 63.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l I CEO I CBO I EBO Parameter Collector Cut-off Current (I B = 0) Collector Cut-off Current (I B = 0) Emitter Cut- off Current (I C = 0) T est Con ditio ns V CE = Half Rates VCEO V CB = Half Rates VCBO V EB = 5 V I C = 30 mA for T IP130/135 for T IP131/136 for TIP132/137 IC = 4 A IC = 6 A IC = 4 A IC = 1 A IC = 4 A I B = 16 mA I B = 30 mA V CE = 4 V V CE = 4 V V CE = 4 V 500 1000 Min . T yp. Max. 0.5 0.2 5 Unit mA mA mA
V CEO(sus) * Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat )* V BE(on) * h FE* Collector-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain
60 80 100 2 4 2.5 15000
V V V V V V
* For PNP types voltage and current values are negative.
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TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147
E
mm TYP. MAX. 4.60 1.32 2.72 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 MIN. 0.173 0.048 0.094 4.40 1.23 2.40
inch TYP. MAX. 0.181 0.051 0.107 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 0.645 0.551 0.116 0.620 0.260 0.154 0.151
A
C
D1
L2 F1
D
G1
Dia. F2 F
L5 L7 L6
L9
L4
G
H2
P011C
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TIP130/TIP131/TIP132/TIP135/TIP136/TIP137
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany- Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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